View LTE42005S_581328.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
LTE42005S NPN microwave power transistor
Product specification Supersedes data of June 1992 1997 Feb 21
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES * Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR * Gold metallization realizes very stable characteristics and excellent lifetime * Input matching cell improves input impedance and allows an easier design of circuits APPLICATION * Common emitter class-A linear power amplifiers up to 4.2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
2 Top view
columns
LTE42005S
PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
1 c
b 3
MAM131
e
Marking code: 502
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common emitter class-A amplifier. MODE OF OPERATION Class-A (CW) linear f (GHz) 4.2 VCE (V) 18 IC (mA) 110 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL1 (mW) 450 Gpo (dB) 6.6 Zi () 100 + j40 ZL () 4 + j4
1997 Feb 21
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature Tmb 75 C CONDITIONS open emitter RBE = 100 open base open collector - - - - - - -65 - at 0.3 mm from case; t = 10 s - MIN.
LTE42005S
MAX. 40 35 16 3 250 4 +200 200 235 V V V V
UNIT
mA W C C C
103 handbook, halfpage IC (mA)
(3)
MBH902
handbook, halfpage
5
MGD966
Ptot (W)
4
102 3
(1)
(2)
2
10 VCEO 1
1 10
15
20
25
30
35
VCE (V) Tmb 75 C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE 100 . (3) Second breakdown limit (independent of temperature).
0 -50
0
50
100
150 200 Tmb (C)
Fig.3 Fig.2 DC SOAR.
Power dissipation derating as a function of mounting-base temperature.
1997 Feb 21
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See "Mounting recommendations in the General part of handbook SC19a". CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICBO ICER IEBO hFE Ccb Cce Ceb PARAMETER collector cut-off current emitter cut-off current emitter cut-off current DC current gain collector-base capacitance collector-emitter capacitance emitter-base capacitance CONDITIONS VCB = 20 V; IE = 0 VCB = 40 V; IE = 0 VCE = 35 V; RBE = 100 VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 110 mA VCB = 20 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCE = 20 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 10 V; VEB = 1 V; IC = IE = 0; f = 1 MHz - - - - 15 - - - MIN. - - - - - 0.5 1.5 6.5 TYP. PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS Tj = 75 C Tj = 75 C; note 1
LTE42005S
MAX. 36 0.7
UNIT K/W K/W
MAX. 0.1 0.25 1 0.2 150 - - -
UNIT A mA mA A pF pF pF
1997 Feb 21
4
Philips Semiconductors
Product specification
NPN microwave power transistor
Table 1
LTE42005S
Scattering parameters: VCE = 18 V; IC = 110 mA (VCE and IC regulated); Tmb = 25 C; Zo = 50 ; typical values. (The figures given between brackets are values in dB). s11 MAGNITUDE (ratio) 0.76 0.75 0.76 0.76 0.76 0.75 0.75 0.74 0.75 0.74 0.73 0.73 0.71 0.70 0.69 0.68 0.67 0.65 0.62 0.57 0.52 0.49 0.45 0.38 0.29 0.24 0.20 0.15 0.12 0.17 0.24 0.31 0.41 0.48 0.53 0.56 ANGLE (deg) -176 180 177 174 171 168 165 163 160 162 157 155 154 151 148 143 138 134 129 122 113 104 99 92 83 69 54 28 -36 -86 -114 -137 -152 -161 -168 -179 s21 MAGNITUDE (ratio) 0.022 (-33.2) 0.023 (-32.8) 0.023 (-32.8) 0.024 (-32.5) 0.024 (-32.3) 0.026 (-31.8) 0.028 (-31.0) 0.031 (-30.1) 0.035 (-29.2) 0.037 (-28.5) 0.041 (-27.8) 0.045 (-27.0) 0.047 (-26.5) 0.049 (-26.1) 0.050 (-25.9) 0.051 (-25.9) 0.058 (-24.7) 0.067 (-23.5 0.077 (-22.3) 0.082 (-21.7) 0.086 (-21.3) 0.093 (-20.6) 0.102 (-19.8) 0.113 (-18.9) 0.119 (-18.5) 0.137 (-17.3) 0.165 (-15.7) 0.202 (-13.9) 0.206 (-13.7) 0.195 (-14.2) 0.177 (-15.0) 0.164 (-15.7 0.154 (-16.2) 0.134 (-17.4) 0.122 (-18.2) 0.105 (-19.6) ANGLE (deg) 37 37 40 41 42 43 43 43 43 44 46 46 44 43 42 39 36 34 31 25 21 16 13 8 6 2 -5 -20 -38 -52 -65 -73 -83 -90 -97 -104 s12 MAGNITUDE (ratio) 8.13 (18.2) 6.95 (16.8) 5.95 (15.5) 5.25 (14.4) 4.69 (13.4) 4.23 (12.5) 3.88 (11.8) 3.61 (11.2) 3.36 (10.5) 3.12 (9.9) 2.95 (9.4) 2.83 (9.0) 2.70 (8.6) 2.56 (8.2) 2.44 (7.7) 2.34 (7.4) 2.16 (6.7) 2.02(6.1) 1.95 (5.8) 1.84 (5.3) 1.78 (5.0) 1.67 (4.5) 1.62 (4.2) 1.52 (3.6) 1.43 (3.1) 1.27 (2.1) 1.08 (0.7) 0.92 (0.8 0.93 (0.6) 0.97 (-0.3) 0.97 (-0.3) 0.93 (-0.6) 0.88 (-1.1) 0.81 (-1.8) 0.77 (-2.3) 0.70 (-3.1) ANGLE (deg) 85 78 73 67 62 57 53 49 44 41 37 32 28 23 19 14 4 -2 -12 -21 -32 -42 -52 -64 -76 -88 -98 -100 -102 -110 -122 -133 -145 -156 -167 -178 s22 MAGNITUDE (ratio) 0.35 0.34 0.34 0.35 0.35 0.36 0.37 0.39 0.40 0.43 0.43 0.45 0.47 0.48 0.50 0.51 0.55 0.59 0.64 0.68 0.72 0.74 0.80 0.80 0.82 0.80 0.68 0.51 0.52 0.63 0.73 0.79 0.83 0.85 0.87 0.89 ANGLE (deg) -62 -66 -71 -75 -79 -83 -87 -90 -95 -98 -101 -104 -107 -110 -114 -116 -124 -129 -134 -138 -143 -150 -157 -163 -170 -179 171 172 -174 -171 -174 -180 174 166 160 154
f (MHz) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000
1997 Feb 21
5
Philips Semiconductors
Product specification
NPN microwave power transistor
APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common emitter class-A test circuit; note 1. MODE OF OPERATION Class-A (CW) Notes f (GHz) 4.2 VCE (V) (2) 18 IC (mA) (2) 110 PL1 (mW) (3) 450 (26.5) typ. 550 (27.4) Gpo (dB) (4) 6.6 typ. 7.2
LTE42005S
Zi () 100 + j40
ZL () 4 + j4
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. 2. IC and VCE regulated. 3. Load power for 1 dB compressed power gain. 4. Low level power gain associated with PL1.
handbook, full pagewidth
input VSWR <3 z0 = 50
,, ,, ,,,,,,,, ,,,,,,,, ,,,,,,, ,,,,,,,, ,,,, ,, , ,,,,,,, ,,,, ,,,,,,,, ,,, ,,, ,,,,,,,, ,, ,,,, ,,
10.4 0.8 3 2 5 4 2.8 11.5 13 5.5 4.5 10 15.5 30 30
1 output VSWR <3 z0 = 50
MSA097
Dimensions in mm. Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (r = 2.54); thickness: 1.6 mm. Output striplines on a double copper-clad Rexolite printed-circuit board with dielectric (r = 2.4); thickness: 0.25 mm.
Fig.4 Prematching test circuit board.
1997 Feb 21
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42005S
handbook, halfpage
600
MGL012
PL (mW) 400
(1)
PL1
typ
200
0 0 50 100 Pi (mW) 150
f = 4.2 GHz; Tmb = 25 C. VCE = 18 V; IC = 110 mA (both regulated). (1) Gpo = 7.2 dB.
Fig.5 Load power as a function of input power.
1997 Feb 21
7
Philips Semiconductors
Product specification
NPN microwave power transistor
PACKAGE OUTLINE
LTE42005S
andbook, full pagewidth
0.1 3.45 2.90 3 20.5 max seating plane 1.0 1 O 0.25 M 4.5 min 0.25 M 4.5 max
1.7 max
3.2 2.9
5.1
5.5 max
3.4 2 2.0 7.1 14.2
(1)
4.5 min
MBC888
Dimensions in mm. Torque on screw: Max. 0.4 Nm Recommended screw: M2.5
Fig.6 SOT440A.
1997 Feb 21
8
Philips Semiconductors
Product specification
NPN microwave power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
LTE42005S
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Feb 21
9
Philips Semiconductors
Product specification
NPN microwave power transistor
NOTES
LTE42005S
1997 Feb 21
10

▲Up To Search▲

Price & Availability of LTE42005S

	To Download LTE42005S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .